KSE3055T
KSE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.
)
1
TO-220 2.
Collector 3.
Emitter
1.
Base
NPN Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 70 60 5 10 6 75 0.
6 150 - 55 ~ 150 Units V V V A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICEO ICEX1 ICEX2 IEBO hFE ...