KSP06

KSP05 : KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement to KSP55/56 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP05 : KSP06 VCEO Collector-Emitter Voltage : KSP05 : KSP06 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 4 500 625 150 -55~150 V V V mA mW °C °C 60 80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter B.

KSP05 : .

KSP06 : KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement to KSP55/56 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP05 : KSP06 VCEO Collector-Emitter Voltage : KSP05 : KSP06 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 4 500 625 150 -55~150 V V V mA mW °C °C 60 80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter B.