| Part Number | KSR1103 |
| Manufacturer | Fairchild Semiconductor |
| Title | Switching Application |
| Description | KSR1103 KSR1103 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R... |
| Features |
Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.3V, IC=5mA 15 0.9 22 1 0.5 3.0 29 1.1 250 3.7 56 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units...
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| File Size | 56.93KB |
| Datasheet |
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KSR1101 : .
KSR1101 : KSR1101 KSR1101 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=4.7KΩ) • Complement to KSR2101 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R0 1 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 E Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwi.
KSR1102 : .
KSR1102 : KSR1102 KSR1102 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=10KΩ) • Complement to KSR2102 Marking R02 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO ICBO hFE VCE(sat) fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakd.
KSR1102 : KSR1102(3RC1102) NPN /SILICON NPN DIGITAL TRANSISTOR :、、。 Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. :，，。 Features: With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 50 V VCEO 50 V VEBO 10 V IC 100 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 IC=10μA IC=100μA VCB=40V VCE=5.0V IC=10mA VCE=5.0mA VCB=10V VCE=5.0V VCE=0.3V IE=0 /Marking: HR02 IE=0 IB=0 IE=0 IC=5.0mA IB=0.5mA IC=10V f.
KSR1103 : .
KSR1104 : .
KSR1104 : KSR1104 KSR1104 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R0 4 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 E Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise.
KSR1105 : .
KSR1105 : KSR1105 KSR1105 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) • Complement to KSR2105 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R0 5 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 E Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwis.
KSR1106 : .
KSR1107 : .
KSR1108 : .
KSR1109 : .