KST5551
KST5551
Amplifier
Transistor
• Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC (max)=350mW
3
2 1
SOT-23
Mark: G1
1.
Base 2.
Emitter 3.
Collector
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 600 350 150 -55 ~ 150 Units V V V mA mW °C °C
• Refer to 2N5551 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Vo...