Part Number
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ISL9N306AS3ST |
Manufacturer
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Fairchild Semiconductor |
Description
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N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
Published
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Apr 5, 2005 |
Detailed Description
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ISL9N306AP3/ISL9N306AS3ST
February 2002
ISL9N306AP3/ISL9N306AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench...
|
Datasheet
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ISL9N306AS3ST
|
Overview
ISL9N306AP3/ISL9N306AS3ST
February 2002
ISL9N306AP3/ISL9N306AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
0052Ω (Typ), VGS = 10V • rDS(ON) = 0.
0085Ω (Typ), VGS = 4.
5V • Qg (Typ) = 30nC, VGS = 5V • Qgd (Typ) = 11nC • CISS (Typ) = 3400pF
Applications
• DC/DC converters
DRAIN (FLANGE)
SOURCE DRAIN GATE D
GATE G SOURCE DRAIN (...
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