High Voltage BiMOSFETTM IXBH9N160G
Monolithic Bipolar MOS
Transistor
N-Channel, Enhancement Mode MOSFET
Transistor
VCES = 1600V IC25 = 9A VCE(sat) 7.
0V tfi(typ) = 70ns
TO-247
Symbol
VCES VCGR
VGES VGEM
IC25 IICCM90
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
Continuous Transient
TC = 25°C
TTCC
= 90°C = 25°C, 1ms
CVlGaEm=p1e0dVIn, dTuVJc=tiv1e2L5o°Cad, RG = 27
TC = 25°C
Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s
Mounting Torque
Maximum Ratings
1600 1600
V V
±20 V ±30 V
9A 5A 10 A
ICM
= 12 1280
A V
100 W
-55 .
.
.
+150 150
-55 .
.
.
+150
°C °C °C
300 °C 260 °C
1.
13/10 Nm...