Part Number
|
IXFN36N100 |
Manufacturer
|
ETC |
Description
|
HiPerFET Power MOSFETs Single Die MOSFET |
Published
|
Apr 5, 2005 |
Detailed Description
|
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS V...
|
Datasheet
|
IXFN36N100
|
Overview
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFN 36N100
VDSS ID25
RDS(on)
= 1000V = 36A = 0.
24 Ω
D
G S
S
Maximum Ratings 1000 1000 ± 20 ± 30 36 144 36 64 4 5 700 -55 .
.
.
+150 150 -55 .
.
.
+150 2500 3000 V V V V A A A mJ J V/ns W °C °C °C V~ V~
miniBLO...
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