HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 100N25 IXFK 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 250 250 ± 20 ± 30 100 75 400 100 64 3 5 560 -55 .
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+150 150 -55 .
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+150 V V V V A A A A mJ J V/ns W °C °C °C °C PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C D ...

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