HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) = 600 V = 60 A = 1.
8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 30 120 ICM = 60 @ 0.
8 VCES 200 -55 .
.
.
+150 150 -55 .
.
.
+150 300 1.
13/10 TO-247 AD TO-268 6 4 V V V V A A A A W °C °C °C °C Nm/lb.
in.
g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C (TAB) G = Gate, E = Emitter, Features C = Collector, TAB = Collector Maxi...

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