Part Number
|
IXSX35N120BD1 |
Manufacturer
|
IXYS Corporation |
Description
|
HIGH VOLTAGE IGBT WITH DIODE |
Published
|
Apr 5, 2005 |
Detailed Description
|
High Voltage IGBT with Diode
Short Circuit SOA Capability
Preliminary data sheet
Symbol VCES VCGR VGES VGEM I C25 I C90 ...
|
Datasheet
|
IXSX35N120BD1
|
Overview
High Voltage IGBT with Diode
Short Circuit SOA Capability
Preliminary data sheet
Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.
6 mm (0.
063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 W Clamped inductive load VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 5 W, non repetitive TC = 25°C IGBT Diode
IXSK 35N120BD1 IXSX 35N120BD1
VCES = 1200 V IC25 = 70 A VCE(SAT) = 3.
6 V
Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.
8 VCES 10 300 190 -55 .
.
.
+150 150 -55 .
.
.
+150 300 10 6 V V V V A A A A ms W ...
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