Part Number
|
IXTN21N100 |
Manufacturer
|
IXYS Corporation |
Description
|
High Voltage MegaMOSTMFETs |
Published
|
Apr 5, 2005 |
Detailed Description
|
High Voltage MegaMOSTMFETs
IXTK 21N100 IXTN 21N100
VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω
N-Channel, Enhancement ...
|
Datasheet
|
IXTN21N100
|
Overview
High Voltage MegaMOSTMFETs
IXTK 21N100 IXTN 21N100
VDSS = 1000 V = 21 A ID25 RDS(on) = 0.
55 Ω
N-Channel, Enhancement Mode
TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.
6 mm (0.
063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.
9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXTK IXTN 1000 1000 ±20 ±30 21 84 500 1000 1000 ±20 ±30 21 84 520 150 -55 .
.
.
+150 2500 3000 V V V V A A W °C °C °C °C V~ V~
S S D G S G D S
D (TAB)
miniBLOC, SOT-227 B E153432
D G
S
-55 .
.
.
+150
G = Gate S = Sour...
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