JANSR2N7278
Formerly FRL234R4
June 1998
4A, 250V, 0.
700 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ .
Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product.
Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect
transistor of the vertical DMOS (VDMOS) struct...