JANSR2N7281
Formerly FRL430R4
Data Sheet
November 1998
File Number
4294
Radiation Hardened, N-Channel Power MOSFET
The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product.
Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect
transistor of the vertical DMOS (VDMOS) structu...