K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.
0 October 1999 Samsung Electronics reserves the right to change products or specification without notice.
-1- Rev.
1.
0 (Oct.
1999) K4S160822D Revision History Revision 1.
0 (October 1999) CMOS SDRAM -2- Rev.
1.
0 (Oct.
1999) K4S160822D 1M x 8Bit x 2 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -.
CAS latency ( 2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst r...

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