K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.
1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.
1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.
3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -.
CAS Latency ( 2 & 3) -.
Burst Length (1, 2, 4, 8 & full page) -.
Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.
6us refresh duty cycle (2K/32ms) CMOS SDRAM ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)