Part Number
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K4S281632M-TL1L |
Manufacturer
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Samsung semiconductor |
Description
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128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Published
|
Apr 7, 2005 |
Detailed Description
|
K4S281632M
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
Samsung Elect...
|
Datasheet
|
K4S281632M-TL1L
|
Overview
K4S281632M
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.
0 Aug.
1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
0 Aug.
1999
K4S281632M
2M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K ...
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