Part Number
|
K4S281633D-N1L |
Manufacturer
|
Samsung semiconductor |
Description
|
8Mx16 SDRAM 54CSP |
Published
|
Apr 7, 2005 |
Detailed Description
|
Preliminary
K4S281633D-RL(N)
CMOS SDRAM
8Mx16 SDRAM 54CSP
(V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V)
Revision 0.6 November 2...
|
Datasheet
|
K4S281633D-N1L
|
Overview
Preliminary
K4S281633D-RL(N)
CMOS SDRAM
8Mx16 SDRAM 54CSP
(V DD/V DDQ 3.
0V/3.
0V & 3.
3V/3.
3V)
Revision 0.
6 November 2001
Rev.
0.
6 Nov.
2001
Preliminary
K4S281633D-RL(N)
Revision History
Revision 0.
0 (February 21.
2001, Target)
CMOS SDRAM
• First generation of 128Mb Low Power SDRAM without special function (V DD 3.
0V, V DDQ 3.
0V)
Revision 0.
1 (June 4.
2001, Target)
• Addition of DC Current value.
Revision 0.
2 (June 20.
2001, Target)
• Changed device name from low power sdram to mobile dram.
Revision 0.
3 (August 1.
2001, Target)
• Change of tSAC from 6ns to 6.
5ns in case of -1L part, from 7ns to 7.
5ns in case of -15 part.
• Change of tOH from 3ns to 3.
5ns.
• Change V IH min.
from 2.
...
Similar Datasheet