Part Number
|
K4S510832B-TC75 |
Manufacturer
|
Samsung semiconductor |
Description
|
512Mb B-die SDRAM Specification |
Published
|
Apr 7, 2005 |
Detailed Description
|
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Elec...
|
Datasheet
|
K4S510832B-TC75
|
Overview
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.
1 February 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
1 February 2004
SDRAM 512Mb B-die (x4, x8, x16)
Revision History
Revision 1.
0 (January, 2004) - First release.
Revision 1.
1 (February, 2004) - Corrected typo.
CMOS SDRAM
Rev.
1.
1 February 2004
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks SDRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Bur...
Similar Datasheet