Part Number
|
K4S511632M-TL1L |
Manufacturer
|
Samsung semiconductor |
Description
|
512Mbit SDRAM |
Published
|
Apr 7, 2005 |
Detailed Description
|
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Elect...
|
Datasheet
|
K4S511632M-TL1L
|
Overview
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.
3 May.
2002
Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
3 May.
2002
K4S511632M
Revision History
Revision 0.
0 (Mar.
2001) Revision 0.
1 (Aug.
2001)
Defined target DC characteristics.
CMOS SDRAM
Revision 0.
2 (Dec.
2001)
• • Changed "Target" to "Preliminary".
Redefined DC characteristics.
Revision 0.
3 (May.
2002)
• Changed "Preliminary" to "Final".
Rev.
0.
3 May.
2002
K4S511632M
8M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with a...
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