Part Number
|
K4S560832E-TC75 |
Manufacturer
|
Samsung semiconductor |
Description
|
256Mb E-die SDRAM Specification |
Published
|
Apr 7, 2005 |
Detailed Description
|
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
Revision 1.3 September. 2003
* Samsung El...
|
Datasheet
|
K4S560832E-TC75
|
Overview
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
Revision 1.
3 September.
2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
3 September.
2003
SDRAM 256Mb E-die (x4, x8, x16)
Revision History
Revision 1.
0 (May.
2003) - First release.
Revision 1.
1 (June.
2003) - Correct Typo Revision 1.
2 (June.
2003) - Added 166MHz speed bin in x16 Revision 1.
3 (September.
2003) - Corrected typo in ordering information.
CMOS SDRAM
Rev.
1.
3 September.
2003
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL c...
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