Part Number
|
K4S640832E |
Manufacturer
|
Samsung semiconductor |
Description
|
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Published
|
Apr 7, 2005 |
Detailed Description
|
K4S640832E
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Sept. 2001
* Samsung Elec...
|
Datasheet
|
K4S640832E
|
Overview
K4S640832E
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.
1 Sept.
2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
1 Sept.
2001
K4S640832E
2M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle)
CMO...
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