K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.
1 Sept.
2001 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
1 Sept.
2001 K4S640832E 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMO...

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