Part Number
|
K4S643232E |
Manufacturer
|
Samsung semiconductor |
Description
|
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
Published
|
Apr 7, 2005 |
Detailed Description
|
K4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung ...
|
Datasheet
|
K4S643232E
|
Overview
K4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.
3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev.
1.
3 (Oct.
2001)
K4S643232E
Revision History
Revision 1.
3 (October 24, 2000)
• Removed CAS Latency 1 from the spec.
CMOS SDRAM
Revision 1.
2 (August 7, 2000) - Target
• Added CAS Latency 1
Revision 1.
1 (March 14, 2001)
• Added K4S643232E-55
Revision 1.
0 (October 20, 2000)
• Removed Note 5 in page 9.
tRDL is set to 2CLK in any case regardless of using AP or frequency
Revision 0.
4 (August 24, 2000)
• Updated DC spec
Revision 0.
3 (August 1, 2000)
• Changed the wording of tRDL rel...
Similar Datasheet