| Part Number | K4S643232F |
| Manufacturer | Samsung semiconductor |
| Title | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| Description | The K4S643232F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high... |
| Features |
• • • • 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock ... |
| File Size | 101.80KB |
| Datasheet |
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K4S643232C : The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. • • • • • ORDERING INFORMATION Part NO. K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80 K4S643232C-TC/L10 Max Freq. 183MHz 166MHz 143MHz 125MHz 100MHz Interface Package .
K4S643232E : The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. • • • • • ORDERING INFORMATION Part NO. K4S643232E-TC/L45 K4S643232E-TC/L50 K4S643232E-TC/L55 K4S643232E-TC/L60 K4S643232E-TC/L70 Max Freq. 222MHz 200MHz 183MHz 166MHz 143MHz Interface Package .
K4S643232H-TC-L50 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-TC/L70 K4S643232H-TC/L60 K4S643232H-TC/L55 K4S643232H-TC/L50 Orgainization 512K x 32 Max Freq. 143MHz(CL=3) 166MHz(CL=3) 183MHz(CL=3) 200MHz(CL=3) Inte.
K4S643232H-TC-L55 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-TC/L70 K4S643232H-TC/L60 K4S643232H-TC/L55 K4S643232H-TC/L50 Orgainization 512K x 32 Max Freq. 143MHz(CL=3) 166MHz(CL=3) 183MHz(CL=3) 200MHz(CL=3) Inte.
K4S643232H-TC-L60 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-TC/L70 K4S643232H-TC/L60 K4S643232H-TC/L55 K4S643232H-TC/L50 Orgainization 512K x 32 Max Freq. 143MHz(CL=3) 166MHz(CL=3) 183MHz(CL=3) 200MHz(CL=3) Inte.
K4S643232H-TC-L70 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-TC/L70 K4S643232H-TC/L60 K4S643232H-TC/L55 K4S643232H-TC/L50 Orgainization 512K x 32 Max Freq. 143MHz(CL=3) 166MHz(CL=3) 183MHz(CL=3) 200MHz(CL=3) Inte.
K4S643232H-UC-L50 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-UC/L70 K4S643232H-UC/L60 K4S643232H-UC/L55 K4S643232H-UC/L50 Orgainization 2Mbx32 Max Freq. 143MHz 166MHz 183MHz 200MHz Interface LVTTL LVTTL LVTTL LVT.
K4S643232H-UC-L55 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-UC/L70 K4S643232H-UC/L60 K4S643232H-UC/L55 K4S643232H-UC/L50 Orgainization 2Mbx32 Max Freq. 143MHz 166MHz 183MHz 200MHz Interface LVTTL LVTTL LVTTL LVT.
K4S643232H-UC-L60 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-UC/L70 K4S643232H-UC/L60 K4S643232H-UC/L55 K4S643232H-UC/L50 Orgainization 2Mbx32 Max Freq. 143MHz 166MHz 183MHz 200MHz Interface LVTTL LVTTL LVTTL LVT.
K4S643232H-UC-L70 : The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S643232H-UC/L70 K4S643232H-UC/L60 K4S643232H-UC/L55 K4S643232H-UC/L50 Orgainization 2Mbx32 Max Freq. 143MHz 166MHz 183MHz 200MHz Interface LVTTL LVTTL LVTTL LVT.