|
Part Number
|
K6X4016T3F |
|
Manufacturer
|
Samsung semiconductor |
|
Description
|
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
|
Published
|
Apr 7, 2005 |
|
Detailed Description
|
K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revi...
|
|
Datasheet
|
K6X4016T3F
|
Overview
K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.
0 0.
1
History
Initial draft Revised - Added Commercial product - Deleted 44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.
0V~3.
6V) Finalized Revised - Changed ICC(Operating power supply current) from 4mA to 2mA - Changed ICC1(Average operating current) from 4mA to 3mA - Changed ICC2(Average operating current) from 40mA to 25mA - Changed ISB1(Standby Current(CMOS), Commercial) from 15µA to 10µA - Changed ISB1(Standby Current(CMOS), Industrial) from 20µA to 10µA - Changed ISB1(Standby Current(CMOS), Automotive) from 30µA to 20µA - Changed IDR(Data retention cur...
Similar Datasheet