Part Number
|
K7B403625B |
Manufacturer
|
Samsung semiconductor |
Description
|
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Published
|
Apr 7, 2005 |
Detailed Description
|
K7A403600B K7A403200B K7A401800B
Document Title
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36 & 128Kx32 & 256Kx18-Bit...
|
Datasheet
|
K7B403625B
|
Overview
K7A403600B K7A403200B K7A401800B
Document Title
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev.
No 0.
0 0.
1 History 1.
Initial draft 1.
Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15, from 300mA to 250mA at -14, ISB1 ; from 100mA to 80mA 1.
Delete Pass-Through 1.
Add x32 org.
and industrial temperature 1.
Final spec release 2.
Changed Pin Capacitance - Cin ; from 5pF to 4pF - Cout ; from 7pF to 6pF Draft Date May.
15.
2001 June.
12.
2001 Remark Preliminary Preliminary
0.
2 0.
3 1.
0
June.
25.
2001 Aug.
11.
2001 Nov.
15.
2001
Preliminary Preliminary Final
The attached data sheet...
Similar Datasheet