|
Part Number
|
K9F1208U0M-YIB0 |
|
Manufacturer
|
Samsung semiconductor |
|
Description
|
64M x 8 Bit NAND Flash Memory |
|
Published
|
Apr 7, 2005 |
|
Detailed Description
|
K9F1208U0M-YCB0, K9F1208U0M-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH ME...
|
|
Datasheet
|
K9F1208U0M-YIB0
|
Overview
K9F1208U0M-YCB0, K9F1208U0M-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.
0
FLASH MEMORY
History
1.
Initial issue
Draft Date
Oct.
27th 2000
Remark
Advanced Information
0.
1
1.
Renamed GND input (pin # 6) on behalf of SE (pin # 6) - The SE input controls the access of the spare area.
When SE is high, the spare area is not accessible for reading or programming.
SE is rec ommended to be coupled to GND or Vcc and should not be toggled during reading or programming.
= Connect this input pin to GND or set to static low state unless the sequential read mode excluding spare area is used.
2.
Updated operation for tRST timing - If reset command(FFh) is written ...
Similar Datasheet