Part Number
|
K9F1G08D0M |
Manufacturer
|
Samsung semiconductor |
Description
|
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
www.DataSheet4U.com
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
12...
|
Datasheet
|
K9F1G08D0M
|
Overview
www.
DataSheet4U.
com
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.
0 0.
1
History
1.
Initial issue 1.
Iol(R/B) of 1.
8V is changed.
- min.
value : 7mA -- 3mA - Typ.
value : 8mA -- 4mA 2.
AC parameter is changed.
tRP(min.
) : 30ns -- 25ns 3.
A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
--- A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
Draft Date
July.
5.
2001 Nov.
5.
2001
Remark
Advance
Dec.
4.
2001
...
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