Part Number
|
K9F2808U0B-YIB0 |
Manufacturer
|
Samsung semiconductor |
Description
|
16M x 8 Bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0
K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
Document Title
16M x...
|
Datasheet
|
K9F2808U0B-YIB0
|
Overview
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0
K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
Document Title
16M x 8 Bit NAND Flash Memory
Revision History
Revision No.
History
0.
0 0.
1 0.
2 Initial issue.
K9F2808U0B(3.
3V device)’s qualification is finished K9F2808Q0B (1.
8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA - Changed typical program operation current (Icc2) from 8mA to 5mA - Changed typical erase operation current (Icc3) from 8mA to 5mA - Changed typical program time(tPROG) from 200us to 300us - Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns - Changed CLE hold time(tCLH) from 10ns to 15ns - Changed CE hold time(tCH) from 10ns to 15ns - C...
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