Part Number
|
K9F2808U0M-YIB0 |
Manufacturer
|
Samsung semiconductor |
Description
|
16M x 8 Bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
com
K9F2808U0M-YCB0, K9F2808U0M-YIB0
Document Title
16M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revisi...
|
Datasheet
|
K9F2808U0M-YIB0
|
Overview
com
K9F2808U0M-YCB0, K9F2808U0M-YIB0
Document Title
16M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No.
History
0.
0 1.
0 Initial issue.
1.
Changed tPROG Parameter : 1ms(Max.
) → 500µs(Max.
) 2.
Changed tBERS Parameter : 4ms(Max.
) → 3ms(Max.
) 3.
Changed Input and Output Timing Level 0.
8V and 2.
0V → 1.
5V 1.
Changed tR Parameter : 7µs(Max.
) → 10µ s(Max.
) 2.
Changed Nop : 10 cycles(Max.
) → Main Array 2 cycles(Max.
) Spare Array 3 cycles(Max.
) t care mode during the data-loading and reading 3.
Added CE don’ 1.
Revised real-time map-out algorithm(refer to technical notes) 1.
Changed device name - KM29U128T - K9F2808U0M-YCB0 - KM29U128IT - K9F2808U0M-YIB0 1.
Ch...
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