Part Number
|
K9F8008W0M-TIB0 |
Manufacturer
|
Samsung semiconductor |
Description
|
1M x 8 bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Document Title
1M x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No...
|
Datasheet
|
K9F8008W0M-TIB0
|
Overview
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Document Title
1M x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No.
0.
0 1.
0
History
Data Sheet 1997 Data Sheet 1998 1.
Changed tBERS parameter : 5ms(Typ.
) → 2ms(Typ.
) 10ms(Max.
) → 4ms(Max.
) 2.
Changed tPROG parameter : 1.
5ms(Max.
) → 1.
0ms(Max.
) Data sheet 1998 1.
Cjanged DC and Operating Characteristics
Parameter Burst Read Operating Current Program Eraase Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Vcc=2.
7V~3.
6V Typ 10 → 5 10 → 5 10 → 5 5 → 10 Max 20 → 10 20 → 10 20 → 10 50 10 → ±10 10 → ±10 Vcc=3.
6V~5.
5V Typ 15 → 10 15 → 10 15 → 10 10 Max 30 → 20 30 → 20 30 → 20 100 → 50 10 → ±10 10 → ±10 µA mA Unit
Draft Date...
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