Part Number
|
K9K1216Q0C |
Manufacturer
|
Samsung semiconductor |
Description
|
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 ...
|
Datasheet
|
K9K1216Q0C
|
Overview
K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No.
History
0.
0 1.
0 Initial issue.
1.
Pin assignment of TBGA dummy ball is changed.
(before) DNU -- (after) N.
C 2.
Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.
8V device (Page 34) 3.
Add the data protection Vcc guidence for 1.
8V device - below about 1.
1V.
(Page 35) 4.
Add the specification of Block Lock scheme.
(Page 29~32) 5.
Pin assignment of TBGA A3 ball is changed.
(before) N.
C -- (after) Vss 2.
0 1.
The Maximum operating current is changed.
Read : Icc1 20mA--30mA Program : Icc2 20mA--40mA Erase : Icc3 20mA--40mA The ...
Similar Datasheet