SMBTA56M
PNP Silicon AF
Transistor
High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA06M (
NPN)
4 5 3 2 1
VPW05980
Type SMBTA56M
Maximum Ratings Parameter
Marking s2G 1=B
Pin Configuration 2=C 3=E
Package
4 n.
c.
5 = C SCT595
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 80 80 4 500 1 100 200 1 150 -65 .
.
150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS 95 °C Junction temperature Storage temperature
mA A mA W °C
Thermal Resistance Junction - soldering point 1) RthJS
55
K/W
1For calculation...