Si9422DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) 0.
420 @ VGS = 10 V ID (A) "1.
7 D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.
1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Limit 200 "20 "1.
7 "1.
3 "12 "12.
5 8 2.
1 2.
...

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