Part Number
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SI2315DS |
Manufacturer
|
Vishay Siliconix |
Description
|
P-Channel MOSFET |
Published
|
Apr 8, 2005 |
Detailed Description
|
Si2315DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 12
rDS(on) (W)
0.055 @ VGS = ...
|
Datasheet
|
SI2315DS
|
Overview
Si2315DS
Vishay Siliconix
P-Channel 1.
25-W, 1.
8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 12
rDS(on) (W)
0.
055 @ VGS = - 4.
5 V 0.
075 @ VGS = - 2.
5 V 0.
118 @ VGS = - 1.
8 V
ID (A)
"3.
5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D Ordering Information: Si2315DS-T1
Top View Si2315DS (C5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
- 12 "8 "3.
5 "2.
8 "...
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