New Product N-Channel 30-V (D-S) MOSFET Si4366DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.
0048 at VGS = 10 V 30 0.
0055 at VGS = 4.
5 V ID (A) 20 19 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4366DY-T1 Si4366DY-T1-E3 (Lead (Pb)-free) FEATURES • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested APPLICATIONS • DC/DC Converters • Synchronous Rectifiers D Available RoHS* COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)...

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