Si4810DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with
Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.
0135 @ VGS = 10 V 0.
020 @ VGS = 4.
5 V
ID (A)
10 8
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V) Diode Forward Voltage
0.
53 V @ 3.
0 A
IF (A)
4.
0 D D D D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810DY Si4810DY-T1 (with Tape and Reel) G N-Channel MOSFET S S S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (
Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET...