Si4828DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) 0.
022 @ VGS = 10 V 0.
030 @ VGS = 4.
5 V 0.
0135 @ VGS = 10 V 0.
0175 @ VGS = 4.
5 V ID (A) 7.
5 6.
5 9.
8 8.
5 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 P Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 "20 S b l Symbol VDS ...

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