Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
007 at VGS = 10 V 0.
010 at VGS = 4.
5 V ID (A) 16 13 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficiency PWM Optimized • 100 % Rg Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 ...

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