Part Number
|
SI6463BDQ |
Manufacturer
|
Vishay Siliconix |
Description
|
P-Channel MOSFET |
Published
|
Apr 8, 2005 |
Detailed Description
|
P-Channel 1.8 V (G-S) MOSFET
Si6463BDQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.015 at VGS = - 4.5 V ...
|
Datasheet
|
SI6463BDQ
|
Overview
P-Channel 1.
8 V (G-S) MOSFET
Si6463BDQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.
015 at VGS = - 4.
5 V - 20 0.
020 at VGS = - 2.
5 V
0.
027 at VGS = - 1.
8 V
ID (A) - 7.
4 - 6.
3 - 5.
5
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
S*
TSSOP-8
D1 S2 S3 G4
Si6463BDQ
8D 7S 6S 5D
Top View
Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Con...
Similar Datasheet