Si6925DQ Vishay Siliconix Dual N-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
05 @ VGS = 4.
5 V 20 0.
06 @ VGS = 3.
0 V 0.
08 @ VGS = 2.
5 V ID (A) "3.
4 "3.
1 "2.
7 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6925DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Li...

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