Semiconductor
SBT5401F
PNP Silicon
Transistor
Description
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE(sat)=-0.
5V(MAX.
) • Complementary pair with SBT5551F
Ordering Information
Type NO.
SBT5401F Marking NFN Package Code SOT-23F
Outline Dimensions
unit :
mm
2.
4±0.
1 1.
6±0.
1
1
2.
9±0.
1 1.
90 BSC
3
0.
4±0.
05
2
0.
15±0.
05
PIN Connections 1.
Base 2.
Emitter 3.
Collector
KST-2096-000
0.
9±0.
1
0~0.
1
1
SBT5401F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction ...