Semiconductor
SBT5551
NPN Silicon
Transistor
Descriptions
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.
5V(MAX.
) • Complementary pair with SBT5401
Ordering Information
Type NO.
SBT5551 Marking FNF Package Code SOT-23
Outline Dimensions
unit :
mm
2.
4±0.
1 1.
30±0.
1
1
1.
90 Typ.
3 2
0.
4 Typ.
0.
45~0.
60
0.
2 Min.
1.
12 Max.
2.
9±0.
1
KST-2012-000
0.
124
PIN Connections 1.
Base 2.
Emitter 3.
Collector
0.
38
0~0.
1
-0.
03 +0.
05
1
SBT5551
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector curren...