Semiconductor
SBT5551F
NPN Silicon
Transistor
Descriptions
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.
5V(MAX.
) • Complementary pair with SBT5401F
Ordering Information
Type NO.
SBT5551F Marking FNF Package Code SOT-23F
Outline Dimensions
unit :
mm
2.
4±0.
1 1.
6±0.
1
1
2.
9±0.
1 1.
90 BSC
3
0.
4±0.
05 0.
9±0.
1
2
0.
15±0.
05
PIN Connections 1.
Base 2.
Emitter 3.
Collector
0~0.
1
KST-2097-000
1
SBT5551F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction tem...