Index
AN-957 (v.
Int)
Measuring HEXFET®Characteristics
(HEXFET is the trademark for International Rectifier Power MOSFETs)
Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs P-Channel HEXFET Power MOSFETs Initial settings Breakdown Drain leakage Gate threshold Gate leakage Transconductance On-resistance Diode drop Characteristics in synchronous rectification Transfer characteristics Measurements without a curve tracer Device capacitances Switching times Gate charge Reverse recovery A fixture to speed-up testing time Related topics
1.
General Curve tracers have generally been designed for making measurements on bipolar
transistors.
Whi...