TetraFET D2017UK METAL GATE RF SILICON FET MECHANICAL DATA C A ! B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES D ( 2 p ls ) E • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND  APPLICATIONS F G H • LOW Crss • SIMPLE BIAS CIRCUITS DRAIN DP PIN 1 PIN 3 SOURCE GATE PIN 2 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM mm 16.
51 6.
35 45° 1.
52 6.
35 0.
13 3.
56 0.
64 Tol.
0.
25 0.
13 5° 0.
13 0.
13 0.
03 0.
51 0.
13 Inches 0.
650 0.
250 45° 0.
060 0.
250 0.
005 0.
140 0.
024 Tol.
0.
010 0.
005 5° 0.
005 0.
005 0.
001 0.
020 0.
005 DIM A B C D E F G H APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stat...

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