PD- 91647C
IRF7523D1
FETKY™ MOSFET /
Schottky Diode
q q q q q
Co-packaged HEXFET® Power MOSFET and
Schottky Diode N-Channel HEXFET Low VF
Schottky Rectifier Generation 5 Technology Micro8TM Footprint
A A S G
1
8
K K D D
VDSS = 30V RDS(on) = 0.
11Ω
Schottky Vf = 0.
39V
2
7
3
6
4
5
Description
T op V ie w
The FETKYTM family of co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board space saving solution for switching
regulator applications.
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier's low forward drop
Schottky rectifiers results i...