Part Number
|
IRFI3205 |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 9.1374B
IRFI3205
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Isolated Package l Hig...
|
Datasheet
|
IRFI3205
|
Overview
PD - 9.
1374B
IRFI3205
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.
5KVRMS
l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description
l l
D
VDSS = 55V
G S
RDS(on) = 0.
008Ω ID = 64A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates t...
Similar Datasheet