Composite
Transistors
XN0F256
Silicon
NPN epitaxial planar type
Unit: mm
For muting ■ Features
• Two elements incorporated into one package (Collector-coupled
transistors with built-in resistor) • Low collector-emitter saturation voltage VCE(sat) • Reduction of the mounting area and assembly cost by one half
4
2.
90+0.
20 –0.
05 1.
9±0.
1 (0.
95) (0.
95) 5 6
0.
16+0.
10 –0.
06
1.
50+0.
25 –0.
05
2.
8+0.
2 –0.
3
3
2
1
0.
30+0.
10 –0.
05 0.
50+0.
10 –0.
05 10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symb...