Composite
Transistors
XN1507
Silicon
NPN epitaxial planer
transistor
Unit: mm
For high break down voltage and low noise amplification
2.
8 -0.
3 0.
65±0.
15
+0.
2 +0.
25
1.
5 -0.
05 5
0.
65±0.
15 1
0.
95
2.
9 -0.
05
q
q
Two elements incorporated into one package.
(Emitter-coupled
transistors) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1
+0.
2
4
0.
95
3
2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06
+0.
1
1.
1 -0.
1
q
2SD814 × 2 elements
0.
8
s Basic Part Number of Element
+0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall...